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| NTE5498 & NTE5499 Silicon Controlled Rectifier (SCR) 12 Amp Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Peak Repetitive Off-State Voltage (TJ = -40 to +125C, RGK = 1k), VDRM, VRRM NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On-State Current (All Conduction Angles, TC = +85C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 12A Average On-State Current (Half Cycle, 180 Conduction Angle, TC = +85C), IT(AV) . . . . . . . . 7.6A Non-Repetitive On-State Current (Half Cycle, 60Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A Non-Repetitive On-State Current (Half Cycle, 50Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A Circuit Fusing Considerations (Half Cycle, t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A2s Peak Gate Current (10s Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak Gate Dissipation (10s Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Average Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Off-State Leakage Current On-State Voltage On-State Threshold Voltage On-State Slope Resistance Gate-Trigger Current Gate-Trigger Voltage Symbol IDRM, IRRM VT VT(TO) rT IGT VGT Test Conditions VDRM + VRRM, RGK = 1k IT = 24A, TJ = +25C TJ = +125C TJ = +125C VD = 7V VD = 7V TJ = +125C TJ = +25C Min Typ Max - - - - - 5 - - - - - - - - 1.5 5.0 1.8 1.0 36 10 2.0 Unit mA A V V m mA V Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn-Off Time Symbol IH IL dv/dt di/dt tgd tq RGK = 1k RGK = 1k IG = 50mA, diG/dt = 0.5A/s, TJ = +125C IG = 50mA, diG/dt = 0.5A/s VD = .67 x VDRM, VR = 35V, IT = IT(AV), TC = +85C Test Conditions Min Typ Max - - 100 - - - - - - - - 40 30 - - 500 50 Unit mA mA V/s A/s ns s VD = .67 x VDRM, RGK = 1k, TJ = +125C 100 .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max Anode .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode .100 (2.54) Gate Anode |
Price & Availability of NTE5499
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